25 Top Mosfet Duals

 

MOSFET Dual N-Ch 100V Spec Power Trench 10 pieces

MOSFET Dual N-Ch 100V Spec Power Trench (10 pieces)

MOSFET Dual N-Ch 100V Spec Power Trench (10 pieces) - Forward transconductance, min 36 s minimum operating temperature, 55 c power dissipation 096 w rise time 4 ns series typical turn-off delay time 11 ns part # aliases fdc3601n_nl unit weight 0001270 oz. Manufacturer fairchild semiconductor product category mosfet rohs transistor polarity n-channel drain-source breakdown voltage 100 v gate-source breakdown voltage +/- 20 v continuous drain current 1 a drain-source on resistance 500 mohms configuration dual maximum operating temperature + 150 c mounting style smd/smt package / case ssot-6 packaging reel fall time 4 ns.

 

MOSFET DUAL N-CH MOSFET 20V 1 piece

MOSFET DUAL N-CH MOSFET 20V (1 piece)

MOSFET DUAL N-CH MOSFET 20V (1 piece) - Packaging reel brand vishay / siliconix channel mode enhancement fall time 17 ns minimum operating temperature, 55 c rise time 17 ns typical turn-off delay time 66 ns part # aliases si7958dp-ge3. Manufacturer vishay product category dual mosfets rohs transistor polarity n-channel vds, drain-source breakdown voltage 40 v vgs, gate-source breakdown voltage +/- 20 v id, continuous drain current 72 a rds on, drain-source resistance 165 mohms configuration dual maximum operating temperature + 150 c pd, power dissipation 14 w mounting style smd/smt package / case powerpak so-8.

 

Mosfet Dual P-Ch 20V D-S

Mosfet Dual P-Ch 20V (D-S)

Mosfet Dual P-Ch 20V (D-S) - Si7913dn-t1-e3. Vishay. Dual. Mosfet. Siliconix.

 

MOSFET Dual N-Ch MOSFET 20V 700 mohms  45V 100 pieces

MOSFET Dual N-Ch MOSFET 20V 700 mohms @ 4.5V (100 pieces)

MOSFET Dual N-Ch MOSFET 20V 700 mohms @ 4.5V (100 pieces) - Packaging reel brand vishay / siliconix channel mode enhancement fall time 17 ns minimum operating temperature, 55 c rise time 17 ns typical turn-off delay time 66 ns part # aliases si7958dp-ge3. Manufacturer vishay product category dual mosfets rohs transistor polarity n-channel vds, drain-source breakdown voltage 40 v vgs, gate-source breakdown voltage +/- 20 v id, continuous drain current 72 a rds on, drain-source resistance 165 mohms configuration dual maximum operating temperature + 150 c pd, power dissipation 14 w mounting style smd/smt package / case powerpak so-8.

 

Mosfet Dual N-Ch 100V Spec Power Trench

Mosfet Dual N-Ch 100V Spec Power Trench

Mosfet Dual N-Ch 100V Spec Power Trench - Fairchild semiconductor fdc3601n, mosfet dual n-ch 100v spec power trench.

 

ON SEMICONDUCTOR NTZD3152PT1G Discretes mosfets Dual P-Channel 20 V 500 mOhm 250 mW Small Signal MOSFET - SOT-563 - 4000 items

ON SEMICONDUCTOR NTZD3152PT1G Discretes mosfets Dual P-Channel 20 V 500 mOhm 250 mW Small Signal MOSFET – SOT-563 – 4000 item(s)

ON SEMICONDUCTOR NTZD3152PT1G Discretes mosfets Dual P-Channel 20 V 500 mOhm 250 mW Small Signal MOSFET – SOT-563 – 4000 item(s) - Dual p-channel 20 v 500 mohm 250 mw small signal mosfet, sot-563 for more information refer to the specification sheet located in the ‘downloads’ section below the image .

 

Mosfet Dual N-Ch Mosfet 20V 50 Ohms  45V

Mosfet Dual N-Ch Mosfet 20V 5.0 Ohms @ 4.5V

Mosfet Dual N-Ch Mosfet 20V 5.0 Ohms @ 4.5V - 0 ohms @ 4. Vishay si1034x-t1-ge3, mosfet dual n-ch mosfet 20v 5. 5v.

 

FAIRCHILD ON SEMICONDUCTOR FDMT800100DC N-Channel 100 V 295 m 79 nC PowerTrench Mosfet - Dual Cool 88 - 3000 items

FAIRCHILD (ON SEMICONDUCTOR) FDMT800100DC N-Channel 100 V 2.95 m? 79 nC PowerTrench Mosfet – Dual Cool 88 – 3000 item(s)

FAIRCHILD (ON SEMICONDUCTOR) FDMT800100DC N-Channel 100 V 2.95 m? 79 nC PowerTrench Mosfet – Dual Cool 88 – 3000 item(s) - 95 m 79 nc powertrench mosfet, dual cool 88 for more information refer to the specification sheet located in the ‘downloads’ section below the image . N-channel 100 v 2.

 

Mosfet Dual P-Ch Fet Enhancement Mode

Mosfet Dual P-Ch Fet Enhancement Mode

Mosfet Dual P-Ch Fet Enhancement Mode - Manufacturer vishay product category dual mosfets rohs transistor polarity n-channel vds, drain-source breakdown voltage 40 v vgs, gate-source breakdown voltage +/- 20 v id, continuous drain current 72 a rds on, drain-source resistance 165 mohms configuration dual maximum operating temperature + 150 c pd, power dissipation 14 w mounting style smd/smt package / case powerpak so-8. Packaging reel brand vishay / siliconix channel mode enhancement fall time 17 ns minimum operating temperature, 55 c rise time 17 ns typical turn-off delay time 66 ns part # aliases si7958dp-ge3.

 

MOSFET Dual PCh PowerTrench

MOSFET Dual PCh PowerTrench

MOSFET Dual PCh PowerTrench - Power dissipation pd2w. 5v. Operating temperature max175c. Transistor polarityp channel. No. Svhcno svhc (16-dec-2013). Mslmsl 1, unlimited. Drain source voltage vds-60v. Transistor case stylesoic. Operating temperature min-55c. 25ohm. 3a. On resistance rds(on)0. Threshold voltage vgs typ-1. Of pins8. Rds(on) test voltage vgs-10v. Continuous drain current id2.

 

FAIRCHILD SEMICONDUCTOR FDMS8320LDC FDMS8320LDC Series 40 V 192 A 11 mOhm N-Ch PowerTrench MOSFET - Dual CoolTM 56 - 3000 items

FAIRCHILD SEMICONDUCTOR FDMS8320LDC FDMS8320LDC Series 40 V 192 A 1.1 mOhm N-Ch PowerTrench MOSFET – Dual CoolTM 56 – 3000 item(s)

FAIRCHILD SEMICONDUCTOR FDMS8320LDC FDMS8320LDC Series 40 V 192 A 1.1 mOhm N-Ch PowerTrench MOSFET – Dual CoolTM 56 – 3000 item(s) - 1 mohm n-ch powertrench® mosfet, dual cooltm 56 for more information refer to the specification sheet located in the ‘downloads’ section below the image . Fdms8320ldc series 40 v 192 a 1.

 

MOSFET Dual P-Ch 18V Spec Power Trench

MOSFET Dual P-Ch 1.8V Spec Power Trench

MOSFET Dual P-Ch 1.8V Spec Power Trench - Manufacturer vishay product category dual mosfets rohs transistor polarity n-channel vds, drain-source breakdown voltage 40 v vgs, gate-source breakdown voltage +/- 20 v id, continuous drain current 72 a rds on, drain-source resistance 165 mohms configuration dual maximum operating temperature + 150 c pd, power dissipation 14 w mounting style smd/smt package / case powerpak so-8. Packaging reel brand vishay / siliconix channel mode enhancement fall time 17 ns minimum operating temperature, 55 c rise time 17 ns typical turn-off delay time 66 ns part # aliases si7958dp-ge3.

 

Q-BAIHE L7 MOSFET Dual Channel Power Audio Amplifier Board High Speed Field Effect Using German VISHAY IRFP240 IRFP9240 Field Output

Q-BAIHE L7 MOSFET Dual Channel Power Audio Amplifier Board High Speed Field Effect Using German VISHAY IRFP240, IRFP9240 Field Output

Q-BAIHE L7 MOSFET Dual Channel Power Audio Amplifier Board High Speed Field Effect Using German VISHAY IRFP240, IRFP9240 Field Output - Voltagedraintosource 100 v. Channeltype n-channel. Qggatecharge 79 nc. Ratedpowerdissipation(p) 32 w. Drain-sourceonresistance-max 295 mΩ.

 

Mosfet Dual N-Ch 100V Spec Power Trench

Mosfet Dual N-Ch 100V Spec Power Trench

Mosfet Dual N-Ch 100V Spec Power Trench - On semiconductor fdc3601n, mosfet dual n-ch 100v spec power trench.

 

MOSFET Dual MOSFET ARRAY Vt260V 1 piece

MOSFET Dual MOSFET ARRAY Vt=2.60V (1 piece)

MOSFET Dual MOSFET ARRAY Vt=2.60V (1 piece) - N-ch. Asym. Si7224dn-t1-ge3. Siliconix. Vishay.

 

Mosfet Dual P-Channel Array

Mosfet Dual P-Channel Array

Mosfet Dual P-Channel Array - Siliconix. Vishay. Asym. Si7224dn-t1-ge3. N-ch.

 

MOSFET Dual N-Ch MOSFET 20V 700 mohms  45V 5 pieces

MOSFET Dual N-Ch MOSFET 20V 700 mohms @ 4.5V (5 pieces)

MOSFET Dual N-Ch MOSFET 20V 700 mohms @ 4.5V (5 pieces) - Packaging reel brand vishay / siliconix channel mode enhancement fall time 17 ns minimum operating temperature, 55 c rise time 17 ns typical turn-off delay time 66 ns part # aliases si7958dp-ge3. Manufacturer vishay product category dual mosfets rohs transistor polarity n-channel vds, drain-source breakdown voltage 40 v vgs, gate-source breakdown voltage +/- 20 v id, continuous drain current 72 a rds on, drain-source resistance 165 mohms configuration dual maximum operating temperature + 150 c pd, power dissipation 14 w mounting style smd/smt package / case powerpak so-8.

 

MOSFET DUAL N-CHANNEL

MOSFET DUAL N-CHANNEL

MOSFET DUAL N-CHANNEL - Power. N-ch. Trench. 100v. Spec.

 

SI4925BDY-T1-E3 - Dual MOSFET Dual P Channel -53 A -30 V 002 ohm 10 V -1 V 10 pieces

SI4925BDY-T1-E3 – Dual MOSFET, Dual P Channel, -5.3 A, -30 V, 0.02 ohm, 10 V, -1 V (10 pieces)

SI4925BDY-T1-E3 – Dual MOSFET, Dual P Channel, -5.3 A, -30 V, 0.02 ohm, 10 V, -1 V (10 pieces) - No of pins 8. Input delay 40. Output delay 40. Supply voltage max 18. Price for pack of 10 transistor polarity dual p channel continuous drain current id -53a drain source voltage vds -30v on resistance rds(on) 002ohm rds(on) test voltage vgs 10v threshold voltage vgs -1v power dissipation pd 11w transistor case style soic no of pins 8pins operating temperature max 150°c product range, automotive qualification standard -.

 

MOSFET Dual P-Ch 20V 37mohm  45V 1 piece

MOSFET Dual P-Ch 20V 37mohm @ 4.5V (1 piece)

MOSFET Dual P-Ch 20V 37mohm @ 4.5V (1 piece) - Continuous drain current id-7. Of pins8. Transistor polaritydual p channel. Threshold voltage vgs typ-1v. Power dissipation pd1. Mslmsl 1, unlimited. 4a. 3w. Price for tape & reel cut 1. Operating temperature max150c. 066ohm. Svhcto be advised. 8v. Transistor case stylepowerpak 1212. No. Rds(on) test voltage vgs1. On resistance rds(on)0. Operating temperature min-55c. Drain source voltage vds-20v.

 

MOSFET Dual N-Ch 30V 10A STripFET V Pwr 1 piece

MOSFET Dual N-Ch 30V 10A STripFET V Pwr (1 piece)

MOSFET Dual N-Ch 30V 10A STripFET V Pwr (1 piece) - Vishay. N-ch. Si7224dn-t1-ge3. Siliconix. Asym.

 

SILICONIX VISHAY SI4532ADY-T1-E3 Dual N P Channel 30 V 0053008 Ohm Surface Mount Power Mosfet - SOIC-8 - 25 items

SILICONIX (VISHAY) SI4532ADY-T1-E3 Dual N & P Channel 30 V 0.053/0.08 Ohm Surface Mount Power Mosfet – SOIC-8 – 25 item(s)

SILICONIX (VISHAY) SI4532ADY-T1-E3 Dual N & P Channel 30 V 0.053/0.08 Ohm Surface Mount Power Mosfet – SOIC-8 – 25 item(s) - Qggatecharge 8 / 10 nc. Channeltype dual n & p channel. Drain-sourceonresistance-max 0053 / 008 Ω. Voltagedraintosource 30 / -30 v. Ratedpowerdissipation(p) 113 w.

 

Mosfet Dual N-Ch Mosfet 20V 700 Mohms  45V

Mosfet Dual N-Ch Mosfet 20V 700 Mohms @ 4.5V

Mosfet Dual N-Ch Mosfet 20V 700 Mohms @ 4.5V - Manufacturer vishay product category dual mosfets rohs transistor polarity n-channel vds, drain-source breakdown voltage 40 v vgs, gate-source breakdown voltage +/- 20 v id, continuous drain current 72 a rds on, drain-source resistance 165 mohms configuration dual maximum operating temperature + 150 c pd, power dissipation 14 w mounting style smd/smt package / case powerpak so-8. Packaging reel brand vishay / siliconix channel mode enhancement fall time 17 ns minimum operating temperature, 55 c rise time 17 ns typical turn-off delay time 66 ns part # aliases si7958dp-ge3.

 

INFINEON IRF7307PBF Dual NP-Channel 2020 V 2 W 2022 nC Hexfet Power Mosfet Surface Mount - SOIC-8 - 25 items

INFINEON IRF7307PBF Dual N/P-Channel 20/20 V 2 W 20/22 nC Hexfet Power Mosfet Surface Mount – SOIC-8 – 25 item(s)

INFINEON IRF7307PBF Dual N/P-Channel 20/20 V 2 W 20/22 nC Hexfet Power Mosfet Surface Mount – SOIC-8 – 25 item(s) - Voltagedraintosource 20 / -20 v. Ratedpowerdissipation(p) 2 w. Channeltype dual n & p channel. Drain-sourceonresistance-max 005 / 009 Ω. Qggatecharge 20 / 22 nc.

 

INFINEON IRF7309TRPBF Discretes mosfets Dual NP-Channel 30 V 0080016 Ohm 25 nC 14 W Generation V Mosfet SOIC-8 - 50 items

INFINEON IRF7309TRPBF Discretes mosfets Dual N/P-Channel 30 V 0.080/0.16 Ohm 25 nC 1.4 W Generation V Mosfet SOIC-8 – 50 item(s)

INFINEON IRF7309TRPBF Discretes mosfets Dual N/P-Channel 30 V 0.080/0.16 Ohm 25 nC 1.4 W Generation V Mosfet SOIC-8 – 50 item(s) - Lowinputcapacitance 520 pf / 440 pf. Drain-sourceonresistance-max 008 Ω / 016 Ωratedpowerdissipation(p) 14 w qggatecharge 25 nc gatesourcevoltagemax -20 v / 20 v draincurrent-max(id) -3 a / 4 a turn-ontime-nom(ton) 68 ns / 11 ns turn-offtime-nom(toff) 22 ns / 25 n. Noofchannels 2. Channeltype dual n/p-ch. Voltagedraintosource -30 v / 30 v.